Author:
Pirouz Pirouz,Galeckas Augustinas
Abstract
Degradation of 4H-SiC PiN diodes - a rapid increase in the forward voltage drop with operation time - has been a focus of research since it was observed a decade ago. A combination of electrical studies and microstructural characterization of the diodes revealed early on that associated with this degradation is a rapid increase in the number and extent of intrinsic stacking faults in the active region of the device. Because PiN diode is a bipolar device, and the degradation occurs under forward biasing, it was suspected that the expansion of stacking faults is driven by injection of electron-hole pairs (ehps). In many ways, this effect is similar to a phenomenon known as recombination-induced dislocation glide (REDG) that occurs in some other semiconductors, including in SiC. In this paper, after a review of the basic materials science issues regarding extended defects in SiC, recent explanations of degradation of PIN diodes are discussed.
Publisher
The Electrochemical Society
Cited by
12 articles.
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