Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias-Reference-Cited by-同舟云学术

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Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias

Published:2018-10-29 Issue:12 Volume:57 Page:124101
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tang Xi,Li Baikui,Moghadam Hamid Amini,Tanner Philip,Han Jisheng,Li Hui,Dimitrijev Sima,Wang Jiannong

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=12/a=124101/pdf

Reference37 articles.

1. The 2018 GaN power electronics roadmap

2. GaN-on-Si Power Technology: Devices and Applications

3. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

4. Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors

5. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

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1. Metal/Insulator/p-GaN Gate Virtual-Body HEMT for Large Gate Swing and Effective hole Injection;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

2. Exploitation of Hole Injection and Spreading for Dynamic Enhancement in p-GaN Gate HEMT under Room/High Temperatures;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

3. Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review;Micromachines;2022-12-01

4. Influence of traps on the gate reverse characteristics of normally-off high-electron-mobility transistors with regrown p-GaN gate;Applied Physics Express;2021-09-28

5. Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor;Applied Physics Letters;2021-08-09

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