Exploitation of Hole Injection and Spreading for Dynamic Enhancement in p-GaN Gate HEMT under Room/High Temperatures
Author:
Affiliation:
1. School of Integrated Circuits, Peking University,Beijing,China
2. School of Physics, Peking University,Beijing,China
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147649.pdf?arnumber=10147649
Reference22 articles.
1. Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain
2. Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer
3. Effects of hole traps on the temperature dependence of current collapse in a normally-OFF gate-injection transistor
4. III-Nitride transistors with photonic-ohmic drain for enhanced dynamic performances
5. Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs
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