III-Nitride transistors with photonic-ohmic drain for enhanced dynamic performances-Reference-Cited by-同舟云学术

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III-Nitride transistors with photonic-ohmic drain for enhanced dynamic performances

Published:2015-12 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Electron Devices Meeting (IEDM)
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Author:

Tang Xi,Li Baikui,Lu Yunyou,Wang Hanxing,Liu Cheng,Wei Jin,Chen Kevin J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7402013/7409598/07409832.pdf?arnumber=7409832

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metal/Insulator/p-GaN Gate Virtual-Body HEMT for Large Gate Swing and Effective hole Injection;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

2. Virtual-Body p-GaN Gate HEMT With Enhanced Ruggedness Against Hot-Electron-Induced Degradation;IEEE Electron Device Letters;2024-05

3. Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation p-GaN Gate HEMT via Light/Hole Pumping;IEEE Transactions on Electron Devices;2024-01

4. Investigation on Dynamic On-Resistance of GaN Power Devices Using Double Pulse Test;Lecture Notes in Electrical Engineering;2024

5. High Dynamic Stability in Enhancement-Mode Active-Passivation p-GaN Gate HEMT;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

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