High Dynamic Stability in Enhancement-Mode Active-Passivation p-GaN Gate HEMT-Reference-Cited by-同舟云学术

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High Dynamic Stability in Enhancement-Mode Active-Passivation p-GaN Gate HEMT

Published:2023-05-28 Issue: Volume: Page:
ISSN:
Container-title:2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Wu Yanlin¹,Nuo Muqin¹,Yang Junjie¹,Zheng Zheyang²,Zhang Li²,Chen Kevin J.²,Hua Mengyuan³,Hao Yilong¹,Yang Xuelin⁴,Shen Bo⁴,Wang Maojun¹,Wei Jin¹

Affiliation:

1. School of Integrated Circuits, Peking University,Beijing,China

2. The Hong Kong University of Science and Technology,Dept. of ECE,Hong Kong

3. Southern University of Science and Technology,Dept. of EEE,Shenzhen,China

4. School of Physics, Peking University,Beijing,China

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147690.pdf?arnumber=10147690

Reference23 articles.

1. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

2. Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses

3. 600-V p-GaN Gate HEMT With Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects

4. High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates

5. Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

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