600-V p-GaN Gate HEMT With Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects
Author:
Affiliation:
1. School of Integrated Circuits, Peking University, Beijing, China
2. School of Physics, Peking University, Beijing, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10027614/10001829.pdf?arnumber=10001829
Reference31 articles.
1. III-Nitride transistors with photonic-ohmic drain for enhanced dynamic performances
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3. Effects of hole traps on the temperature dependence of current collapse in a normally-OFF gate-injection transistor
4. Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor
5. E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High V th Stability by Field Plate Engineering
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