Suppression of Hot-Electron-Induced Dynamic R<sub>ON</sub> Degradation in p-GaN Gate HEMT Using Active Passivation and Virtual Body-Reference-Cited by-同舟云学术

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Suppression of Hot-Electron-Induced Dynamic R_ON Degradation in p-GaN Gate HEMT Using Active Passivation and Virtual Body

Published:2024-06-02 Issue: Volume: Page:530-533
ISSN:
Container-title:2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Yang Junjie¹,Yu Jingjing¹,Wu Yanlin¹,Cui Jiawei¹,Yang Han²,Yang Xuelin²,Zhang Meng³,Shen Bo²,Wang Maojun¹,Wei Jin¹

Affiliation:

1. School of Integrated Circuits, Peking University,Beijing,China

2. School of Physics, Peking University,Beijing,China

3. Beijing University of Technology,Faculty of Information Technology,Beijing,China

Funder

National Key Research and Development Program of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10579539/10579462/10579577.pdf?arnumber=10579577

Reference25 articles.

1. Planar GaN Power Integration – The World is Flat

2. Single-Phase T-Type Inverter Performance Benchmark Using Si IGBTs, SiC MOSFETs and GaN HEMTs

3. 1200V GaN switches on sapphire: a low-cost, high-performance platform for EV and industrial applications;Gupta;IEDM Tech ., San Francisco, CA, USA,2022

4. CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications;Kwan;IEDM Tech. Dig., San Francisco, CA, USA,2014

5. GaN Power Integration Technology and Its Future Prospects

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