Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs-Reference-Cited by-同舟云学术

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Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs

Published:2018-07 Issue:7 Volume:65 Page:2765-2770
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Borga Matteo^ORCID,Meneghini Matteo^ORCID,Stoffels Steve,Li Xiangdong^ORCID,Posthuma Niels,Van Hove Marleen^ORCID,Decoutere Stefaan^ORCID,Meneghesso Gaudenzio^ORCID,Zanoni Enrico

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8386725/08361493.pdf?arnumber=8361493

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