Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal–Organic Vapor Phase Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference14 articles.
1. Role of Nanoscale Strain Inhomogeneity on the Light Emission from InGaN Epilayers
2. Growth mode of InGaN on GaN (0001) in MOVPE
3. A study of indium incorporation in In-rich InGaN grown by MOVPE
4. Comparison study of N- and In-polar {0001} InN layers grown by MOVPE
5. Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal–organic vapor phase epitaxy;Applied Physics Letters;2022-08-22
2. Recent advances and challenges in the MOCVD growth of indium gallium nitride: A brief review;Materials Science in Semiconductor Processing;2022-06
3. Suppressing the zincblende-phase inclusions in nitrogen-polar wurtzite-phase InGaN films by pulsed metalorganic chemical vapor deposition;Micro and Nanostructures;2022-04
4. MOVPE growth and indium incorporation of polar, semipolar (112‾2) and (202‾1) InGaN;physica status solidi (b);2015-09-21
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