A study of indium incorporation in In-rich InGaN grown by MOVPE-Reference-Cited by-同舟云学术

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A study of indium incorporation in In-rich InGaN grown by MOVPE

Published:2010-03 Issue:10 Volume:256 Page:3352-3356
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Guo Y.,Liu X.L.,Song H.P.,Yang A.L.,Xu X.Q.,Zheng G.L.,Wei H.Y.,Yang S.Y.,Zhu Q.S.,Wang Z.G.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference29 articles.

1. Theoretical study of composition fluctuation in InGaN films on various substrates;Mukose;J. Phys.: Conf. Ser.,2009

2. Superior radiation resistance of InGaN alloys: full-solar-spectrum photovoltaic material system;Wu;J. Appl. Phys.,2003

3. Compositional inhomogeneity and immiscibility of a GaInN ternary alloy;Wakahara;Appl. Phys. Lett.,1997

4. Solid phase immiscibility in GaInN;Ho;Appl. Phys. Lett.,1996

5. In surface segregation in M-plane (In,Ga)N/GaN multiple quantum well structures;Sun;Appl. Phys. Lett.,2003

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2. Avoiding Gallium Pollution in Close‐Coupled Showerhead Reactors, Alternative Process Routes;physica status solidi (a);2023-04-14

3. Parasitic behavior of different V/III ratios on the properties of InGaN/GaN heterostructures by MOCVD technique;Journal of Alloys and Compounds;2023-03

4. Numerical simulation of homojunction p-i-n In0.4Ga0.6N solar cell with different absorber layer configurations;Optik;2022-12

5. Cubic InxGa1−xN/GaN quantum wells grown by Migration Enhanced Epitaxy (MEE) and conventional Molecular Beam Epitaxy (MBE);Journal of Alloys and Compounds;2022-11

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