In surface segregation in M-plane (In,Ga)N/GaN multiple quantum well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1635661
Reference19 articles.
1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2. Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates
3. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
4. GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates
5. Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells
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1. Comparative study of semipolar(202¯1), nonpolar(101¯0)and polar(0001)InGaN multi-quantum well structures grown under N- and In-excess by plasma assisted molecular beam epitaxy;Journal of Crystal Growth;2017-05
2. Indium incorporation in semipolar (202̅1) and nonpolar (101̅0) InGaN grown by plasma assisted molecular beam epitaxy;Journal of Crystal Growth;2017-02
3. Employing low-temperature barriers to achieve strain-relaxed and high-performance GaN-based LEDs;Optics Express;2016-05-23
4. Effect of Morphological and Structural Properties on SIMS Depth Profiles of InGaN/GaN Multiple Quantum Wells Grown on Sapphire by MOCVD;Journal of Molecular and Engineering Materials;2015-09
5. Enhanced carrier localization in near-ultraviolet multiple quantum wells using quaternary AlInGaN as the well layers;RSC Advances;2015
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