Comparative study of semipolar(202¯1), nonpolar(101¯0)and polar(0001)InGaN multi-quantum well structures grown under N- and In-excess by plasma assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

Comparative study of semipolar(202¯1), nonpolar(101¯0)and polar(0001)InGaN multi-quantum well structures grown under N- and In-excess by plasma assisted molecular beam epitaxy

Published:2017-05 Issue: Volume:465 Page:43-47
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sawicka M.,Wolny P.,Kryśko M.,Turski H.,Szkudlarek K.,Grzanka S.,Skierbiszewski C.

Funder

National Science Centre

Polish National Centre for Research and Development

Polish Ministry of Science and Higher Education

Management Board of the Mazowieckie Voivodship

European Union from the European Social Fund

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. Color stability, wave function overlap and leakage currents in InGaN-based LED structures: the role of the substrate orientation

2. Large anisotropic adatom kinetics on nonpolar GaN surfaces: Consequences for surface morphologies and nanowire growth

3. Adatom diffusion at GaN (0001) and (0001̄) surfaces

4. Structure of GaN(0001): The laterally contracted Ga bilayer model

5. Mg doping and its effect on the semipolar GaN(112¯2) growth kinetics

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface Recombination in Ga- and N-Polar GaN/(Al,Ga)N Quantum Wells Grown by Molecular Beam Epitaxy;Physical Review Applied;2022-04-15

2. Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain‐Balanced Nonpolar InGaN/AlGaN Quantum Wells;physica status solidi (b);2022-03-06

3. Composition Inhomogeneity in Nonpolar (101̅0) and Semipolar (202̅1) InAlN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy;Crystal Growth & Design;2021-08-18

4. Comprehensive optimization of electronic and optical properties of polar III-nitride laser;Applied Physics B;2021-02-05

5. Photoluminescence study of non-polar m-plane InGaN and nearly strain-balanced InGaN/AlGaN superlattices;Journal of Applied Physics;2020-05-14