Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species-Reference-Cited by-同舟云学术

Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species

Published:2013-03-01 Issue:3R Volume:52 Page:031302
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Suwa Tomoyuki,Teramoto Akinobu,Kumagai Yuki,Abe Kenichi,Li Xiang,Nakao Yukihisa,Yamamoto Masashi,Nohira Hiroshi,Muro Takayuki,Kinoshita Toyohiko,Sugawa Shigetoshi,Ohmi Tadahiro,Hattori Takeo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference40 articles.

1. Si‐SiO2interface structures on Si(100), (111), and (110) surfaces

2. Microscopic structure of theSiO2/Si interface

3. Periodic Changes in $\bf SiO_{2}/Si(111)$ Interface Structures with Progress of Thermal Oxidation

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