Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells-Reference-Cited by-同舟云学术

Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells

Published:2013-08-01 Issue:8S Volume:52 Page:08JG09
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Meneghini Matteo,Vaccari Simone,Garbujo Alessio,Trivellin Nicola,Zhu Dandan,Humphreys Colin J.,Calciati Marco,Goano Michele,Bertazzi Francesco,Ghione Giovanni,Bellotti Enrico,Meneghesso Gaudenzio,Zanoni Enrico

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference25 articles.

1. Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

2. Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

3. Temperature-dependence of the internal efficiency droop in GaN-based diodes

4. Origin of efficiency droop in GaN-based light-emitting diodes

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