Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection-Reference-Cited by-同舟云学术

Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection

Published:2015-09-28 Issue:12 Volume:118 Page:125709
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhang Shuailong¹²^ORCID,Xie Enyuan¹,Yan Tongxing³,Yang Wei³,Herrnsdof Johannes¹,Gong Zheng¹,Watson Ian M.¹,Gu Erdan¹²,Dawson Martin D.¹,Hu Xiaodong³

Affiliation:

1. Institute of Photonics, SUPA, University of Strathclyde, Glasgow G4 0NW, United Kingdom

2. Joint Laboratory of Advanced Optoelectronic Materials and Devices, State Key Laboratory, Wuhan University of Technology, Wuhan 430070, China and Institute of Photonics, University of Strathclyde, Glasgow G4 0NW, United Kingdom

3. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4931575

Reference51 articles.

1. Solid-State Light Sources Getting Smart

2. Prospects for LED lighting

3. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

4. Development of InGaN-based red LED grown on (0001) polar surface

5. Electrical, spectral and optical performance of yellow–green and amber micro-pixelated InGaN light-emitting diodes

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