Effect of AlGaN interlayer in bottom quantum barriers on efficiency enhancement of InGaN green light-emitting diodes-Reference-Cited by-同舟云学术

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Effect of AlGaN interlayer in bottom quantum barriers on efficiency enhancement of InGaN green light-emitting diodes

Published:2019-04 Issue: Volume:128 Page:307-311
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Wang Zhenxu,Mo Chunlan,Zheng Changda,Wu Xiaoming,Liu Junlin,Jiang Fengyi

Funder

State Key Program of the National Science Foundation of China

National Key R&D Program of China

Development Program of Jiangxi province

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Temperature-dependent electroluminescence from InGaN/GaN green light-emitting diodes on silicon with different quantum-well structures

2. Relationship between threading dislocations and the optical properties in GaN-based LEDs on Si Substrates

3. Suppression of Nonradiative Recombination by V-Shaped Pits inGaInN/GaNQuantum Wells Produces a Large Increase in the Light Emission Efficiency

4. The investigation on carrier distribution in InGaN/GaN multiple quantum well layers

5. Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate*;Chinese Physics B;2020-04-01

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