The investigation on carrier distribution in InGaN/GaN multiple quantum well layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3587176
Reference19 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes
3. Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping
4. Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates
5. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
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1. Multiple-carrier-lifetime model for carrier dynamics in InGaN/GaN LEDs with a non-uniform carrier distribution;Journal of Applied Physics;2024-01-16
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3. Interwell carrier transport in InGaN/(In)GaN multiple quantum wells;Applied Physics Letters;2019-04-15
4. Effect of AlGaN interlayer in bottom quantum barriers on efficiency enhancement of InGaN green light-emitting diodes;Superlattices and Microstructures;2019-04
5. Semi-polar InGaN/GaN multiple quantum well solar cells with spectral response at up to 560 nm;Solar Energy Materials and Solar Cells;2018-02
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