Influence of sandwiched GaN/AlGaN/GaN lower quantum barrier on crystallinity and luminescence of an asymmetric GaN-based high-power laser diode-Reference-Cited by-同舟云学术

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Influence of sandwiched GaN/AlGaN/GaN lower quantum barrier on crystallinity and luminescence of an asymmetric GaN-based high-power laser diode

Published:2019-03-01 Issue: Volume: Page:
ISSN:
Container-title:Gallium Nitride Materials and Devices XIV
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Author:

Lan Tian,Zhou Guangzheng,Wang Congcong,Li Ying,Huang Rui,Yan Anru,Wang Zhiyong

Publisher

SPIE

Reference23 articles.

1. Recent improvement in nitride lasers;Masui,2017

2. GaN-based light-emitting diodes on various substrates: a critical review

3. Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

4. Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

5. Internal power loss in GaN-based lasers: mechanisms and remedies

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design Analysis of Linear Graded Quantum barriers in Ultavoilet-C Laser Diodes;2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD);2022-09-12

2. Improving the gain and efficiency of ultraviolet-C laser diodes;Journal of Materials Science;2022-09

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