Design Analysis of Linear Graded Quantum barriers in Ultavoilet-C Laser Diodes
Author:
Affiliation:
1. Ghulam Ishaq Khan Institute of Engineering Sciences and Technology Topi,Faculty of Engineering Sciences,Khyber Pakhtunkhwa,Pakistan,23460
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9894736/9894737/09894790.pdf?arnumber=9894790
Reference5 articles.
1. Enhancement of deep violet InGaN double quantum wells laser diodes performance characteristics using superlattice last quantum barrier;amirhoseiny;Journal of Optoelectronical Nanostructures,2021
2. Theoretical Analysis of Tunnel-Injected Sub-300 nm AlGaN Laser Diodes
3. Influence of sandwiched GaN/AlGaN/GaN lower quantum barrier on crystallinity and luminescence of an asymmetric GaN-based high-power laser diode
4. Origin of efficiency droop in GaN-based light-emitting diodes;kim;Applied Physics Letters,2007
5. Comparison between blue lasers and light-emitting diodes for future solid-state lighting
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