Highly reliable low-temperature (180 °C) solution-processed passivation for amorphous In–Zn–O thin-film transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://iopscience.iop.org/article/10.7567/1882-0786/ab1726/pdf
Reference27 articles.
1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
2. Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
3. Simultaneous modification of pyrolysis and densification for low-temperature solution-processed flexible oxide thin-film transistors
4. Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors
5. Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors
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1. Aqueous solution-processed In2O3 TFTs using focused plasma in gas mixtures;Applied Surface Science;2024-10
2. Effect of Average Grain Size on the Uniformity and Ferroelectricity of BTO/PSX Thin Films Processed by Low-Temperature Solution Method;ACS Omega;2024-07-29
3. Performance and Stability Enhancement of Fully Solution-Processed a-InZnO Thin-Film Transistors via Argon Plasma Treatment;ACS Applied Electronic Materials;2023-11-08
4. Performance and reliability improvement of all-solution processed indium zinc oxide thin-film transistor by UV irradiation treatment;Journal of Physics D: Applied Physics;2023-07-12
5. Improved Electrical and Temporal Stability of In-Zn Oxide Semiconductor Thin-Film Transistors With Organic Passivation Layer;IEEE Journal of the Electron Devices Society;2022
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