Author:
Yu Xinge,Smith Jeremy,Zhou Nanjia,Zeng Li,Guo Peijun,Xia Yu,Alvarez Ana,Aghion Stefano,Lin Hui,Yu Junsheng,Chang Robert P. H.,Bedzyk Michael J.,Ferragut Rafael,Marks Tobin J.,Facchetti Antonio
Abstract
Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations.
Publisher
Proceedings of the National Academy of Sciences
Cited by
173 articles.
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