Improved Electrical and Temporal Stability of In-Zn Oxide Semiconductor Thin-Film Transistors With Organic Passivation Layer-Reference-Cited by-同舟云学术

Improved Electrical and Temporal Stability of In-Zn Oxide Semiconductor Thin-Film Transistors With Organic Passivation Layer

Author:

Heo Kwan-Jun¹,Tarsoly Gergely²^ORCID,Lee Jae-Yun²,Choi Seong Gon²^ORCID,Koh Jung-Hyuk³,Kim Sung-Jin²^ORCID

Affiliation:

1. Research and Development Center, SK Hynix, Icheon, South Korea

2. College of Electrical and Computer Engineering, Chungbuk National University, Cheongju, South Korea

3. College of Electrical and Electronics Engineering, Chung-Ang University, Seoul, South Korea

Funder

Ministry of Science and ICT (MSIT), South Korea, under the Grand Information Technology Research Center Support Program

Institute for Information and Communications Technology Planning and Evaluation

Basic Science Research Program through the National Research Foundation of Korea

Ministry of Education

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

Reference43 articles.

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