P‐1.14: Effects of Active Layer Thickness on Performance of InZnO Transistors-Reference-Cited by-同舟云学术

P‐1.14: Effects of Active Layer Thickness on Performance of InZnO Transistors

Published:2024-04 Issue:S1 Volume:55 Page:670-672
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:Symp Digest of Tech Papers

Author:

Shi Jianbing¹,Li Qi¹,Xie Jingye¹,Xiong Longhai¹,Sun Chuanli²,Dong Junchen²,Han Dedong¹³⁴,Zhang Xing¹⁵

Affiliation:

1. School of integrated circuits Peking University Beijing China 100091

2. School of Information & Communication Engineering Beijing Information Science and Technology University Beijing China 100101

3. Beijing Advanced Innovation Center for Integrated Circuits Beijing China 100871

4. Beijing Superstring Academy of Memory Technology Beijing China 100176

5. Peking University Shenzhen Graduate School Shenzhen China 518055

Abstract

Oxide transistors attract much attention in fields of displays and low‐cost integrated circuits (ICs). In the present work, IZO transistors were fabricated and the effects of active layer thickness on electrical characteristics of IZO transistors were studied. The devices with IZO thickness of 10 nm show the best electrical characteristics with a high on/off current ratio of 3.4×10 8 , a large field‐effect mobility (μFE) of 11.88 cm 2 /Vs, a small subthreshold swing (SS) of 178.10 mV/decade, and a reasonable turn‐on voltage (Von) of ‐0.3 V. It is demonstrated that IZO is a promising active layer material for future displays and IC applications.

Publisher

Wiley

Reference7 articles.

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