Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length-Reference-Cited by-同舟云学术

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Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length

Published:2021-03 Issue:3 Volume:68 Page:1050-1056
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Samanta Subhranu^ORCID,Han Kaizhen^ORCID,Sun Chen,Wang Chengkuan,Kumar Annie,Thean Aaron Voon-Yew,Gong Xiao^ORCID

Funder

Agency for Science, Technology and Research (A*STAR), Singapore, AME Programmatic Funds

Singapore Ministry of Education (MOE) Tier 2

Tier 1

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9361759/09329149.pdf?arnumber=9329149

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sputtered AlOx interlayer for improving performance of a-InGaZnO TFTs: A study on hydrogen diffusion mitigation and electron modulation;Applied Physics Letters;2024-08-05

2. Impact of channel thickness on device scaling in vertical InGaZnO channel charge-trap memory transistors with ALD Al2O3 tunneling layer;Materials Science in Semiconductor Processing;2024-08

3. Scaling Potential of Nanosheet Oxide Semiconductor FETs for Monolithic 3D Integration–ALD Material Engineering, High-Field Transport, Statistical Variability;2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits);2024-06-16

4. Strong Immunity to Drain-Induced Barrier Lowering in ALD-Grown Preferentially Oriented Indium Gallium Oxide Transistors;ACS Applied Materials & Interfaces;2024-04-25

5. Characteristics Analysis of IGZO TFT and Logic Unit in the Temperature Range of 8–475 K;Electronics;2024-04-10

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