Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/11/i=6/a=061103/pdf
Reference33 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display
3. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
4. Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low Cost, Al 2 O 3 and ZrAlO x Stack Passivation by Spray Pyrolysis for Highly Stable Amorphous InGaZnO Thin‐Film Transistors;Advanced Materials Interfaces;2022-08-17
2. Spray pyrolyzed fluorinated inorganic-organic passivation for solution-processed a-InZnO thin-film transistors;Materials Science in Semiconductor Processing;2022-08
3. Effects of carbon impurity in ALD-Al2O3 film on HAXPES spectrum and electrical properties of Al2O3/AlGaN/GaN MIS structure;Japanese Journal of Applied Physics;2022-05-24
4. Aluminum Precursor Interactions with Alkali Compounds in Thermal Atomic Layer Etching and Deposition Processes;ACS Applied Materials & Interfaces;2021-01-11
5. Improvement in Bias Stress Stability of Solution-Processed Amorphous InZnO Thin-Film Transistors via Low-Temperature Photosensitive Passivation;IEEE Electron Device Letters;2020-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3