Aluminum Precursor Interactions with Alkali Compounds in Thermal Atomic Layer Etching and Deposition Processes-Reference-Cited by-同舟云学术

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Aluminum Precursor Interactions with Alkali Compounds in Thermal Atomic Layer Etching and Deposition Processes

Published:2021-01-11 Issue:3 Volume:13 Page:4723-4730
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Hennessy John¹^ORCID,Jewell April D.¹,Jones John-Paul¹,Crouch Garrison M.²,Nikzad Shouleh¹

Affiliation:

1. Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109, United States

2. Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States

Funder

National Aeronautics and Space Administration

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c19399

Reference35 articles.

1. Self‐limited layer‐by‐layer etching of Si by alternated chlorine adsorption and Ar+ion irradiation

2. Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions with Sn(acac)2 and Hydrogen Fluoride

3. Trimethylaluminum as the Metal Precursor for the Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions

4. Thermal Atomic Layer Etching of Silica and Alumina Thin Films Using Trimethylaluminum with Hydrogen Fluoride or Fluoroform

5. Thermal Atomic Layer Etching of ZnO by a “Conversion-Etch” Mechanism Using Sequential Exposures of Hydrogen Fluoride and Trimethylaluminum

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1. Preliminary optical performance of the SPRITE CubeSat instrument;UV, X-Ray, and Gamma-Ray Space Instrumentation for Astronomy XXIII;2023-10-05

2. Atomic layer deposition of calcium fluoride for barrier coating applications;Journal of Vacuum Science & Technology A;2023-06-27

3. Thermal Atomic Layer Etching of Al₂O₃ Using Sequential HF and BCl₃ Exposures: Evidence for Combined Ligand-Exchange and Conversion Mechanisms;Chemistry of Materials;2022-07-11

4. Origin of enhanced thermal atomic layer etching of amorphous HfO₂;Journal of Vacuum Science & Technology A;2022-03

5. Comparison of AlF3 thin films grown by thermal and plasma enhanced atomic layer deposition;Journal of Vacuum Science & Technology A;2022-01

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