Flatband voltage stability and time to failure of MOCVD-grown SiO2 and Si3N4 dielectrics on N-polar GaN
Author:
Funder
Office of Naval Research
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://iopscience.iop.org/article/10.7567/1882-0786/ab4d39/pdf
Reference22 articles.
1. Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs
2. N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance
3. Insulated gate and surface passivation structures for GaN-based power transistors
4. Electronic surface and dielectric interface states on GaN and AlGaN
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-Voltage (>1.2 kV) AlGaN/GaN Monolithic Bidirectional HEMTs With Low On-Resistance (2.54 mΩ ⋅ cm2);IEEE Transactions on Electron Devices;2024-01
2. On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers;Applied Physics Letters;2021-03-22
3. A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods;Journal of Applied Physics;2020-08-21
4. Characterization of AlSiO dielectrics with varying silicon composition for N-polar GaN-based devices;Semiconductor Science and Technology;2020-08-11
5. Improved operation stability of in situ AlSiO dielectric grown on (000–1) N-polar GaN by MOCVD;Applied Physics Express;2020-05-28
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3