Improved operation stability of in situ AlSiO dielectric grown on (000–1) N-polar GaN by MOCVD
Author:
Funder
Office of Naval Research
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.35848/1882-0786/ab93a3/pdf
Reference34 articles.
1. Insulated gate and surface passivation structures for GaN-based power transistors
2. Gallium nitride based transistors
3. Flatband voltage stability and time to failure of MOCVD-grown SiO2 and Si3N4 dielectrics on N-polar GaN
4. The effects of oxide traps on the MOS capacitance
5. Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 0001¯) substrates;Applied Physics Letters;2022-08-08
2. Effects of carbon impurity in ALD-Al2O3 film on HAXPES spectrum and electrical properties of Al2O3/AlGaN/GaN MIS structure;Japanese Journal of Applied Physics;2022-05-24
3. Improved operational reliability of MOCVD-grown AlSiO gate dielectric on β-Ga2O3 (001) by post-metallization annealing;Semiconductor Science and Technology;2021-07-28
4. Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions;Applied Physics Letters;2021-07-26
5. Characterization of MOCVD-grown AlSiO gate dielectric on β-Ga2O3 (001);Applied Physics Letters;2021-04-26
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