Gallium nitride based transistors-Reference-Cited by-同舟云学术

Gallium nitride based transistors

Published:2001-07-26 Issue:32 Volume:13 Page:7139-7157
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Xing H,Keller S,Wu Y-F,McCarthy L,Smorchkova I P,Buttari D,Coffie R,Green D S,Parish G,Heikman S,Shen L,Zhang N,Xu J J,Keller B P,DenBaars S P,Mishra U K

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Reference74 articles.

1. Monte Carlo simulation of electron transport in gallium nitride

2. Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

3. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN

4. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

5. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

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