A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance

A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods

Published:2020-08-21 Issue:7 Volume:128 Page:074101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Liu Wenjian¹^ORCID,Sayed Islam¹^ORCID,Georgieva Jana¹,Chan Silvia²,Keller Stacia¹,Mishra Umesh K.¹

Affiliation:

1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106, USA

2. Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106, USA

Funder

Office of Naval Research

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0012289

Reference27 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. GaN on Si Technologies for Power Switching Devices

3. GaN-on-Si Power Technology: Devices and Applications

4. Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

5. Flatband voltage stability and time to failure of MOCVD-grown SiO2 and Si3N4 dielectrics on N-polar GaN

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2. Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β -Ga2O3;Applied Physics Letters;2023-08-21

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4. Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions;Applied Physics Letters;2021-07-26

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