Transparent Oxide Thin-Film Transistors Using n-(In2O3)0.9(SnO2)0.1/InGaZnO4Modulation-Doped Heterostructures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
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1. Investigation to the Carrier Transport Properties in Heterojunction-Channel Amorphous Oxides Thin-Film Transistors Using Dual-Gate Bias;IEEE Electron Device Letters;2023-01
2. Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor;Advanced Electronic Materials;2022-10-18
3. High‐Performance Coplanar Dual‐Channel a‐InGaZnO/a‐InZnO Semiconductor Thin‐Film Transistors with High Field‐Effect Mobility;Advanced Electronic Materials;2021-01-20
4. Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors;Materials;2020-04-20
5. Photoluminescence Lifetime Based Investigations of Linker Mediated Electronic Connectivity Between Substrate and Nanoparticle;Frontiers in Chemistry;2019-04-10
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