High‐Performance Coplanar Dual‐Channel a‐InGaZnO/a‐InZnO Semiconductor Thin‐Film Transistors with High Field‐Effect Mobility-Reference-Cited by-同舟云学术

High‐Performance Coplanar Dual‐Channel a‐InGaZnO/a‐InZnO Semiconductor Thin‐Film Transistors with High Field‐Effect Mobility

Published:2021-01-20 Issue:3 Volume:7 Page:2000896
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Billah Mohammad Masum¹,Siddik Abu Bakar¹,Kim Jung Bae²,Yim Dong Kil²,Choi Soo Young²,Liu Jian³,Severin Daniel³,Hanika Markus³,Bender Marcus³,Jang Jin¹^ORCID

Affiliation:

1. Department of Information Display Kyung Hee University 26 Kyungheedae‐ro Dongdaemun‐gu Seoul 02447 South Korea

2. Applied Materials Inc. Santa Clara CA 95054 USA

3. Applied Materials GmbH & Co. KG Siemensstr. 100 Alzenau 63755 Germany

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000896

Reference51 articles.

1. 65.2: Distinguished Paper: World-Largest (6.5”) Flexible Full Color Top Emission AMOLED Display on Plastic Film and Its Bending Properties

2. Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C

3. A Dual‐Gate InGaZnO 4 ‐Based Thin‐Film Transistor for High‐Sensitivity UV Detection

4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

5. ZnO-based transparent thin-film transistors

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