Effect of Internal Electric Field in Well Layer of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes on Efficiency Droop-Reference-Cited by-同舟云学术

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Effect of Internal Electric Field in Well Layer of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes on Efficiency Droop

Published:2012-10-01 Issue:10R Volume:51 Page:100201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Han Sang-Heon,Lee Dong-Yul,Lim Jin-Young,Lee Jeong Wook,Kim Dong-Joon,Kim Young Sun,Kim Sung-Tae,Park Seong-Ju

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference15 articles.

1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

2. Origin of efficiency droop in GaN-based light-emitting diodes

3. Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes

4. Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

5. Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes

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2. Carrier transport mechanisms of InGaN-based light-emitting diodes using a single pulsed current;Superlattices and Microstructures;2019-04

3. Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C;Applied Physics Letters;2018-01-08

4. Comparison of the Luminous Efficiencies of Ga- and N-PolarInxGa1−xN/InyGa1−yNQuantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy;Physical Review Applied;2016-09-27

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