Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes-Reference-Cited by-同舟云学术

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Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes

Published:2010-02 Issue:5 Volume:96 Page:051113
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Han Sang-Heon,Cho Chu-Young,Lee Sang-Jun,Park Tae-Young,Kim Tae-Hun,Park Seung Hyun,Won Kang Sang,Won Kim Je,Kim Yong Chun,Park Seong-Ju

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3302458

Reference14 articles.

1. Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells

2. Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

3. Optical properties of doped InGaN/GaN multiquantum-well structures

4. Si delta doping in a GaN barrier layer of InGaN∕GaN multiquantum well for an efficient ultraviolet light-emitting diode

5. The effect of silicon doping in the selected barrier on the electroluminescence of InGaN∕GaN multiquantum well light emitting diode

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