The effect of silicon doping in the selected barrier on the electroluminescence of InGaN∕GaN multiquantum well light emitting diode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2431717
Reference7 articles.
1. Mapping In concentration, strain, and internal electric field in InGaN/GaN quantum well structure
2. Solid phase immiscibility in GaInN
3. Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures
4. Silicon doping effect on the optical properties of In0.15Ga0.85N/In0.015Ga0.985N quantum wells
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