Silicon doping effect on the optical properties of In0.15Ga0.85N/In0.015Ga0.985N quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference13 articles.
1. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
2. Recombination dynamics of localized excitons inIn0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells
3. Luminescences from localized states in InGaN epilayers
4. Optical properties of Si-doped GaN
5. Comparison of Si doping effect in optical properties of GaN epilayers and InxGa1−xN quantum wells
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1. Influence of Si doping on the structural and optical properties of InGaN epilayers;Chinese Physics B;2013-10
2. The effect of silicon doping in the barrier on the electroluminescence of InGaN/GaN multiple quantum well light emitting diodes;Journal of Applied Physics;2013-09-14
3. Enhanced deep ultraviolet emission from Si-doped Al x Ga 1− x N/AlN MQWs;Chinese Physics B;2010-12
4. Influence of growth parameters on the properties of InGaN/GaN multiple quantum well grown by metalorganic chemical vapor deposition;Current Applied Physics;2007-07
5. Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE;physica status solidi (c);2007-06
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