Comparison of Si doping effect in optical properties of GaN epilayers and InxGa1−xN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126594
Reference22 articles.
1. InGaN-based blue laser diodes
2. InGaN-based blue laser diodes
3. Evidence of compensating centers as origin of yellow luminescence in GaN
4. Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells
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