Influence of growth parameters on the properties of InGaN/GaN multiple quantum well grown by metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference22 articles.
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2. Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration
3. In surface segregation in InGaN/GaN quantum wells
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2. Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow;Chinese Physics B;2017-08
3. Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes;Optics Express;2016-06-13
4. Influence of p-GaN shape on the light emission characteristics of InGaN nanodisk embedded p-i-n GaN nanorods;Current Applied Physics;2015-09
5. The effect of InxGa1−xN back-barriers on the dislocation densities in Al0.31Ga0.69N/AlN/GaN/InxGa1−xN/GaN heterostructures (0.05 ≤ x ≤ 0.14);Current Applied Physics;2013-01
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