The effect of InxGa1−xN back-barriers on the dislocation densities in Al0.31Ga0.69N/AlN/GaN/InxGa1−xN/GaN heterostructures (0.05 ≤ x ≤ 0.14)
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference19 articles.
1. Linearity characteristics of microwave-power GaN HEMTs
2. Device Technologies for RF Front-End Circuits in Next-Generation Wireless Communications
3. Determination of the critical indium composition corresponding to the metal–insulator transition in InxGa1−xN (0.06⩽x⩽0.135) layers
4. Influence of growth parameters on the properties of InGaN/GaN multiple quantum well grown by metalorganic chemical vapor deposition
5. Observation of a two‐dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN‐AlxGa1−xN heterojunctions
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1. A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN‐based high‐frequency power electronics;Surface and Interface Analysis;2022-01-26
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3. Improving the Efficiency Enhancement of Photonic Crystal Based InGaN Solar Cell by Using a GaN Cap Layer;Advances in Materials Science and Engineering;2014
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