Determination of the critical indium composition corresponding to the metal–insulator transition in InxGa1−xN (0.06⩽x⩽0.135) layers
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference24 articles.
1. Ultraviolet light-emitting diodes based on group three nitrides
2. Reduction of the Intensity Noise by Electric Positive and Negative Feedback in Blue-Violet InGaN Semiconductor Lasers
3. Electron Transport in Ga-Rich In x Ga 1− x N Alloys
4. Electrical properties of InGaN grown by molecular beam epitaxy
5. The metal-insulator transition in disordered 3d systems: a new view
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The effect of InxGa1−xN back-barriers on the dislocation densities in Al0.31Ga0.69N/AlN/GaN/InxGa1−xN/GaN heterostructures (0.05 ≤ x ≤ 0.14);Current Applied Physics;2013-01
2. Carrier transport in InxGa1−xN thin films grown by modified activated reactive evaporation;Applied Physics Letters;2011-08-22
3. Contributions of impurity band and electron–electron interactions to magnetoconductance in AlGaN;Philosophical Magazine;2010-09-14
4. Electron–Electron Interactions in Sb-Doped SnO2 Thin Films;Journal of Electronic Materials;2010-05-22
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