Enhanced deep ultraviolet emission from Si-doped Al x Ga 1− x N/AlN MQWs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference18 articles.
1. AlGaN multiple quantum well based deep UV LEDs and their applications
2. The Blue Laser Diode
3. Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm
4. Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN
5. Enhanced deep ultraviolet luminescence from AlGaN quantum wells grown in the three-dimensional mode
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1. III-Nitride Short Period Superlattices for Deep UV Light Emitters;Applied Sciences;2018-11-23
2. Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition;Chinese Physics B;2014-07-31
3. Characterization of Zn-doped GaN grown by metal–organic vapor phase epitaxy;Rare Metals;2014-04-25
4. Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition;Chinese Physics B;2013-05
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