Si delta doping in a GaN barrier layer of InGaN∕GaN multiquantum well for an efficient ultraviolet light-emitting diode
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1904151
Reference16 articles.
1. The Blue Laser Diode
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3. Effect of Si delta doping on the luminescence properties of InP/InAlP quantum dots
4. Hole confinement effects on multiple Si δ doping in GaAs
5. n‐type delta‐doped quantum well lasers with extremely low transparency current density
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2. High-efficiency near-UV light-emitting diodes on Si substrates with InGaN/GaN/AlGaN/GaN multiple quantum wells;Journal of Materials Chemistry C;2020
3. Influence of Silicon-Doping in n-AlGaN Layer on the Optical and Electrical Performance of Deep Ultraviolet Light-Emitting Diodes;Russian Journal of Physical Chemistry A;2019-12
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