Hole confinement effects on multiple Si δ doping in GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106811
Reference14 articles.
1. Delta doping of III–V compound semiconductors: Fundamentals and device applications
2. Electrical characterization of gallium planar‐doped ZnSe grown by molecular‐beam epitaxy
3. Arsenic doped ZnSe grown by molecular-beam epitaxy
4. Migration of Si IN δ-doped GaAs and Al Ga1 − As: Effect of substrate temperature
5. Infrared excitation of the subbands of A δ-layer in GaAs and Si
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