Evidence of Nitrogen Reorganization in GaAsSbN Alloys
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference19 articles.
1. GaAsSbN: a new low-bandgap material for GaAs substrates
2. GaNAsSb: how does it compare with other dilute III V-nitride alloys?
3. Effect of nitrogen on the GaAs0.9−xNxSb0.1 dielectric function from the near-infrared to the ultraviolet
4. OMVPE of GaAsSbN for long wavelength emission on GaAs
5. Improved hole confinement in GaInAsN–GaAsSbN thin double-layer quantum-well structure for telecom-wavelength lasers
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1. Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states;Solar Energy Materials and Solar Cells;2019-09
2. Study of GaAsSb:N bulk layers grown by liquid phase epitaxy for solar cells applications;Materials Research Express;2019-04-24
3. Compositional inhomogeneities in type-I and type-II superlattices for GaAsSbN-based solar cells: Effect of thermal annealing;Applied Surface Science;2018-11
4. Effect of Sb and N resonant states on the band structure and carrier effective masses of GaAs 1-x-y N x Sb y alloys and GaAs 1-x-y N x Sb y /GaAs quantum wells calculated using k·p Hamiltonian;Superlattices and Microstructures;2017-06
5. Rapid thermal annealing effects on the optical properties of GaAs0.9−xNxSb0.1 structures grown by MBE;Materials Science in Semiconductor Processing;2015-01
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