OMVPE of GaAsSbN for long wavelength emission on GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. GaAsSbN: a new low-bandgap material for GaAs substrates
2. MOVPE growth of strained InGaAsN/GaAs quantum wells
3. Nonlinear dependence of N incorporation on In content in GaInNAs
4. Structural changes during annealing of GaInAsN
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1. Low-temperature MOVPE using TEGa for suppressed layer undulation in InxGa1−xAs/GaAs1−yPy superlattice on vicinal substrates;Journal of Crystal Growth;2015-03
2. Properties of ‘bulk’ GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration;Journal of Crystal Growth;2014-05
3. Mixed Semiconductor Alloys for Optical Devices;Annual Review of Chemical and Biomolecular Engineering;2013-06-07
4. Carrier dynamics in bulk 1eV InGaAsNSb materials and epitaxial lift off GaAs-InAlGaP layers grown by MOVPE for multi-junction solar cells;SPIE Proceedings;2013-03-25
5. Evidence of Nitrogen Reorganization in GaAsSbN Alloys;Japanese Journal of Applied Physics;2012-02-01
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