Effect of Sb and N resonant states on the band structure and carrier effective masses of GaAs 1-x-y N x Sb y alloys and GaAs 1-x-y N x Sb y /GaAs quantum wells calculated using k·p Hamiltonian-Reference-Cited by-同舟云学术

Effect of Sb and N resonant states on the band structure and carrier effective masses of GaAs 1-x-y N x Sb y alloys and GaAs 1-x-y N x Sb y /GaAs quantum wells calculated using k·p Hamiltonian

Published:2017-06 Issue: Volume:106 Page:20-32
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Mal Indranil,Samajdar D.P.,Das T.D.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference35 articles.

1. Temperature-dependent photoluminescence spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs single quantum wells under different excitation intensities

2. Energy gap reduction in dilute nitride GaAsSbN

3. Band gap reduction in GaNSb alloys due to the anion mismatch

4. GaNAsSb: how does it compare with other dilute III V-nitride alloys?

5. GaAsSbN: a new low-bandgap material for GaAs substrates

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