Improvement of Removal Rate in Abrasive-Free Planarization of 4H-SiC Substrates Using Catalytic Platinum and Hydrofluoric Acid-Reference-Cited by-同舟云学术

Improvement of Removal Rate in Abrasive-Free Planarization of 4H-SiC Substrates Using Catalytic Platinum and Hydrofluoric Acid

Published:2012-04-01 Issue:4R Volume:51 Page:046501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Okamoto Takeshi,Sano Yasuhisa,Tachibana Kazuma,Pho Bui Van,Arima Kenta,Inagaki Kouji,Yagi Keita,Murata Junji,Sadakuni Shun,Asano Hiroya,Isohashi Ai,Yamauchi Kazuto

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference19 articles.

1. Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

2. 100 mm 4HN-SiC Wafers with Zero Micropipe Density

3. Structural analysis and reduction of in-grown stacking faults in 4H–SiC epilayers

4. Impacts of growth parameters on deep levels in n-type 4H-SiC

5. Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition

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4. Polishing-pad-free electrochemical mechanical polishing of single-crystalline SiC surfaces using polyurethane–CeO2 core–shell particles;International Journal of Machine Tools and Manufacture;2017-03

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