Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor
2. Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth
3. High-speed homoepitaxy of SiC from methyltrichlorosilane by chemical vapor deposition
4. Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process
5. Influence of growth conditions on basal plane dislocation in 4H-SiC epitaxial layer
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