Impacts of growth parameters on deep levels in n-type 4H-SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2437666
Reference26 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
3. 12.7kV ultra high voltage SiC commutated gate turn-off thyristor: SICGT
4. Characterisation and Defects in Silicon Carbide
5. Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers
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1. Properties of Z1 and Z2 Deep-Level Defects in n-Type Epitaxial and High-Purity Semi-Insulating 4H-SiC;Crystals;2024-06-07
2. Depth profiles of deep levels generated in the tail region of Al ion implantation into n-type 4H-SiC;Japanese Journal of Applied Physics;2024-06-03
3. Effect of the Oxidation Process on Carrier Lifetime and on SF Defects of 4H SiC Thick Epilayer for Detection Applications;Micromachines;2022-06-30
4. Homoepitaxial Growth of 4H‐SiC on Vicinal Substrates;Wide Bandgap Semiconductors for Power Electronics;2021-10-29
5. Depth Distribution of Defects in SiC PiN Diodes Formed Using Ion Implantation or Epitaxial Growth;physica status solidi (b);2021-10-27
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