Analysis of line-and-space resist patterns with sub-20 nm half-pitch fabricated using high-numerical-aperture exposure tool of extreme ultraviolet lithography-Reference-Cited by-同舟云学术

Analysis of line-and-space resist patterns with sub-20 nm half-pitch fabricated using high-numerical-aperture exposure tool of extreme ultraviolet lithography

Published:2016-08-04 Issue:9 Volume:55 Page:096501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kozawa Takahiro,Santillan Julius Joseph,Itani Toshiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=9/a=096501/pdf

Reference39 articles.

1. Soft x-ray reduction lithography using multilayer mirrors

2. EUV Lithography Development and Research Challenges for the 22 nm Half-pitch

3. Performance overview and outlook of EUV lithography systems

4. EUV lithography scanner for sub-8nm resolution

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